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CZTS thin films were deposited by sol–gel spin coating method using precursor solutions preparedby dissolving copper acetate dihydrate, zinc acetate dihydrate, tin chloride and thiourea inmethanol and monoethylamine then annealed in RTP furnace at 500 °C. Sol–gel precursorsolutions were prepared with different Zn/Sn in a precursor solution and were annealed at differenttime intervals; and their effects on the optical and electrical properties of CZTS (Cu2ZnSnS4) filmswere investigated. The optical band-gap values were estimated to be between 1.30 and 1.88 eVwhile the absorption coefficients were in the range of 104 cm–1 in the visible region. The resistivityand carrier concentrations ranged from 13.12 to 2634 kΩ/□ and 1017 to 1020 cm−3, respectively.The influence of Zn/Sn ratio and annealing time on structural properties of CZTS thin films arealso discussed.
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